45MHz TO 2700MHz IQ MODULATOR WITH SYNTHESIZER/VCO AND BASEBAND INTERFACE`

文件：4.04262 Mbytes 頁數(shù)：19 Pages

RFMD

威訊聯(lián)合

2-18 GHz Wideband Variable-Gain Driver Amplifier

[Raytheon RF Components] Description The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-μm gate MESFET devices fabricated on a semi-insulating GaAs substrate. The first two stages are

文件：479.76 Kbytes 頁數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

2-18 GHz Wideband Variable-Gain Driver Amplifier

General Description The Fairchild Semiconductor’s RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ionimplanted, 0.5-μm gate MESFET devices fabricated on a semi-insulating GaAs substrate. The first two stages are 4

文件：201.62 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導體

Multipurpose Single-Phase Filter with Various Variations and Functions

文件：1.5662 Mbytes 頁數(shù)：8 Pages

TDK

東電化