HIGH PERFORMANCE RELAYS

文件：82.59 Kbytes 頁數(shù)：1 Pages

MACOM

25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. Thes

文件：42.57 Kbytes 頁數(shù)：5 Pages

INTERSIL

25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. Thes

文件：42.57 Kbytes 頁數(shù)：5 Pages

INTERSIL

-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs

Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：33.2 Kbytes 頁數(shù)：4 Pages

INTERSIL

-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs

Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：91.48 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs

Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：91.48 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs

Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：33.2 Kbytes 頁數(shù)：4 Pages

INTERSIL

70A, 60V, 0.014 Ohm, N-Channel Power MOSFET

The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching

文件：86.38 Kbytes 頁數(shù)：8 Pages

INTERSIL

DVD Video Recorder Service Manual

Feature General A few seconds after tuning on the unit,you can start recording to DVD-RAM,HDD. You can switch the operation of this function (ON/OFF) on the menu screen. . Quick start(REC) principle In the power-off at Quick start, only power supplies for video IC,tuner and storage media are

文件：5.97543 Mbytes 頁數(shù)：71 Pages

PANASONIC

松下

DVD Video Recorder Service Manual

Feature General A few seconds after tuning on the unit,you can start recording to DVD-RAM,HDD. You can switch the operation of this function (ON/OFF) on the menu screen. . Quick start(REC) principle In the power-off at Quick start, only power supplies for video IC,tuner and storage media are

文件：5.97543 Mbytes 頁數(shù)：71 Pages

PANASONIC

松下