| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
RFD3055 | 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app 文件：416.36 Kbytes 頁(yè)數(shù)：8 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
RFD3055 | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such 文件：418.34 Kbytes 頁(yè)數(shù)：8 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
RFD3055 | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as 文件：82.17 Kbytes 頁(yè)數(shù)：8 Pages | INTERSIL | INTERSIL | |
RFD3055 | 12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) Description The RFD3055, RFD3055SM and RFP3055 N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for 文件：118.15 Kbytes 頁(yè)數(shù)：8 Pages | HARRIS | HARRIS | |
RFD3055 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：309.09 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | |
RFD3055 | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs | Renesas 瑞薩 | Renesas | |
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app 文件：86.26 Kbytes 頁(yè)數(shù)：8 Pages | INTERSIL | INTERSIL | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 107mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：309.53 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
N-Channel Logic Level Power MOSFET These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app 文件：1.37302 Mbytes 頁(yè)數(shù)：8 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app 文件：416.36 Kbytes 頁(yè)數(shù)：8 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD |
技術(shù)參數(shù)
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
60
- VGS Max (V)：
±16
- VGS(th) Max (V)：
3
- ID Max (A)：
11
- PD Max (W)：
38
- RDS(on) Max @ VGS = 4.5 V(mΩ)：
107
- Qg Typ @ VGS = 10 V (nC)：
5.2
- Ciss Typ (pF)：
350
- Package Type：
IPAK-3/DPAK-3 STRAIGHT LEAD
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
SOT-252 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價(jià) | |||
FSC |
2021+ |
TO-252 |
6800 |
原廠原裝,歡迎咨詢 |
詢價(jià) | ||
onsemi(安森美) |
25+ |
IPAK |
21000 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
FAIRCHILD |
24+ |
TO-252 |
36800 |
詢價(jià) | |||
TO-251 |
1000 |
原裝長(zhǎng)期供貨! |
詢價(jià) | ||||
仙童 |
05+ |
TO-251 |
5000 |
原裝進(jìn)口 |
詢價(jià) | ||
HAR/FSC |
17+ |
TO-252 |
6200 |
詢價(jià) | |||
25+ |
TO-252 |
5000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | |||
FSC |
23+ |
TO-252 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
FAIRCHIL/ |
25+23+ |
TO-251 |
19974 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) |
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