650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

Features ? High efficiency and linear gain operations ? Integrated ESD protection ? Internally matched pair transistors in push-pull configuration ? Large positive and negative gate-source voltage range for improved class C operation ? Excellent thermal stability, low HCI drift ? In complia

文件：2.03193 Mbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導體

650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

The RF5L08600CB4 is a 650 W, 50 V high performance, internally matched LDMOS FETs, designed for multiple applications in the frequency range from 0.4 to 1 GHz. ? High efficiency and linear gain operations \n? Integrated ESD protection \n? Internally matched pair transistors in push-pull configuration \n? Large positive and negative gate-source voltage range for improved class C operation \n? In compliance with the european directive 2002/95/EC;

ST

意法半導體

8x1x0.8

WALSIN

華新科技

上傳：深圳市華康聯(lián)電子科技有限公司

MSD

WALSIN

華新科技

上傳：深圳市力拓輝電子有限公司

WALSIN

華新科技

上傳：深圳特瑞杰電子有限公司