950 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features 1. Measured on 88-108 MHz wideband test board with two RF5L05950CF2 devices connected in push-pull. ? High efficiency and linear gain operations ? Integrated ESD protection ? Large positive and negative gate-source voltage range for improved class C operation ? Excellent thermal st

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STMICROELECTRONICS

意法半導(dǎo)體

950 W，50 V，HF至500 MHz RF功率LDMOS晶體管

The RF5L05950CF2 is a 950 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz. It can be used for both CW and pulse application. It is featured for high power and high ruggedness, suitable for industri ? High efficiency and linear gain operations \n? Integrated ESD protection \n? Large positive and negative gate-source voltage range for improved class C operation \n? Excellent thermal stability, low HCI drift \n? In compliance with the european directive 2002/95/EC;

ST

意法半導(dǎo)體

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WALSIN

華新科技

上傳：深圳市華康聯(lián)電子科技有限公司

MSD

WALSIN

華新科技

上傳：深圳市力拓輝電子有限公司

WALSIN

華新科技

上傳：深圳特瑞杰電子有限公司