700 W, 40 V, HF to 1 GHz RF power LDMOS transistor

Features ? High efficiency and linear gain operations ? Integrated ESD protection ? Internally matched pair transistors in push-pull configuration ? Large positive and negative gate-source voltage range for improved class C operation ? Optimized for Doherty applications ? Excellent thermal

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STMICROELECTRONICS

意法半導(dǎo)體

700 W, 40 V, HF to 1 GHz RF power LDMOS transistor

The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency range. It can be used in class AB, B or C for both CW and pulse applications in narrow-band operation. It is qualified up to 40 V operation. ? High efficiency and linear gain operations \n? Integrated ESD protection \n? Internally matched pair transistors in push-pull configuration \n? Large positive and negative gate-source voltage range for improved class C operation \n? Optimized for Doherty applications \n? Excellent thermal stabilit;

ST

意法半導(dǎo)體

原廠原封

QORVO

威訊聯(lián)合

上傳：深圳科宇泰科技有限公司

QFN-16

RFMD

威訊聯(lián)合

上傳：深圳市富利微電子科技有限公司

QFN

RF

上傳：深圳市拓億芯電子有限公司