150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor

The RF3L05150CB4 is a 150 W, 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats. ? High efficiency and linear gain operations \n? Integrated ESD protection \n? Large positive and negative gate-source voltage range for improved class C operation \n? In compliance with the european directive 2002/95/EC;

ST

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絲?。?a target="_blank" title="Marking" href="/3l05150/marking.html">3L05150；Package：LBB；150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor

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STMICROELECTRONICS

意法半導體

Package：LBB；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產品 晶體管 - FET，MOSFET - 射頻 描述：150 W, 28/32 V RF POWER LDMOS TR

STMICROELECTRONICS

意法半導體

VQFN48

TI

德州儀器

上傳：深圳市紐聯(lián)電子有限公司

VQFN48

TI

德州儀器

上傳：深圳市鑫煒納電子有限公司