30MHz TO 2500MHz, 9W GaN WIDEBAND

Product Description The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance a

文件：1.2512 Mbytes 頁數(shù)：15 Pages

RFMD

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30MHz TO 2500MHz, 9W GaN WIDEBAND

Qorvo

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30MHz TO 2500MHz, 9W GaN WIDEBAND

Product Description The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance a

文件：1.2512 Mbytes 頁數(shù)：15 Pages

RFMD

威訊聯(lián)合

30MHz TO 2500MHz, 9W GaN WIDEBAND

Product Description The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance a

文件：1.2512 Mbytes 頁數(shù)：15 Pages

RFMD

威訊聯(lián)合

30MHz TO 2500MHz, 9W GaN WIDEBAND

Product Description The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance a

文件：1.2512 Mbytes 頁數(shù)：15 Pages

RFMD

威訊聯(lián)合

30MHz TO 2500MHz, 9W GaN WIDEBAND

Product Description The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance a

文件：1.2512 Mbytes 頁數(shù)：15 Pages

RFMD

威訊聯(lián)合

30MHz TO 2500MHz, 9W GaN WIDEBAND

Product Description The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance a

文件：1.2512 Mbytes 頁數(shù)：15 Pages

RFMD

威訊聯(lián)合

30MHz TO 2500MHz, 9W GaN WIDEBAND

Product Description The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance a

文件：1.2512 Mbytes 頁數(shù)：15 Pages

RFMD

威訊聯(lián)合

30MHz TO 2500MHz, 9W GaN WIDEBAND

Product Description The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance a

文件：1.2512 Mbytes 頁數(shù)：15 Pages

RFMD

威訊聯(lián)合

30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER

Product Description\nThe RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amp ■ Advanced GaN HEMT Technology\n■ Output Power of 9W\n■ Advanced Heat-Sink Technology\n■ 30MHz to 2500MHz\n?? Instantaneous Bandwidth\n■ Input Internally Matched to 50?\n■ 28V Operation Typical\n?? Performance\n?? ■ POUT 39.5dBm\n?? ■ Gain 12dB\n?? ■ Power Added Efficiency 45%\n????? (30MHz to 2;

Qorvo

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