QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE

Product Description The RF3159 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, wh

文件：567.28 Kbytes 頁數(shù)：26 Pages

RFMD

威訊聯(lián)合

QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE

Qorvo

威訊聯(lián)合

QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE

Product Description The RF3159 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, wh

文件：567.28 Kbytes 頁數(shù)：26 Pages

RFMD

威訊聯(lián)合

Mini Buccaneer?

文件：343.22 Kbytes 頁數(shù)：4 Pages

BULGIN

Bipolar Transistors

文件：75.46 Kbytes 頁數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

Low voltage 1廓 max single SPDT switch with break-before-make feature

Description The STG3159 is a high-speed CMOS low voltage single analog S.P.D.T. (Single Pole Dual Throw) switch or 2:1 Multiplexer /Demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications.

文件：386.16 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導體