2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET??Power MOSFET

This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switch

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2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET? Power MOSFET

This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switchin ? 2.5A, 12V\n? rDS(ON) = 0.130?\n? Temperature Compensating PSPICE? Model\n? On-Resistance vs Gate Drive Voltage Curves\n? Peak Current vs Pulse Width Curve\n? UIS Rating Curve\n? Related Literature\n?? - TB334 “Guidelines for Soldering Surface Mount\n????? Components to PC Boards”;

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