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          首頁(yè) >RD4>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          RD48F2000P0ZTQ0

          Intel StrataFlash Embedded Memory

          Introduction This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

          文件:1.60991 Mbytes 頁(yè)數(shù):102 Pages

          INTEL

          英特爾

          RD48F2P0VB00

          Intel StrataFlash Embedded Memory

          Introduction This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

          文件:1.60991 Mbytes 頁(yè)數(shù):102 Pages

          INTEL

          英特爾

          RD48F2P0VBQ0

          Intel StrataFlash Embedded Memory

          Introduction This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

          文件:1.60991 Mbytes 頁(yè)數(shù):102 Pages

          INTEL

          英特爾

          RD48F2P0VT00

          Intel StrataFlash Embedded Memory

          Introduction This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

          文件:1.60991 Mbytes 頁(yè)數(shù):102 Pages

          INTEL

          英特爾

          RD48F2P0VTQ0

          Intel StrataFlash Embedded Memory

          Introduction This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

          文件:1.60991 Mbytes 頁(yè)數(shù):102 Pages

          INTEL

          英特爾

          RD48F2P0ZB00

          Intel StrataFlash Embedded Memory

          Introduction This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

          文件:1.60991 Mbytes 頁(yè)數(shù):102 Pages

          INTEL

          英特爾

          RD48F2P0ZBQ0

          Intel StrataFlash Embedded Memory

          Introduction This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

          文件:1.60991 Mbytes 頁(yè)數(shù):102 Pages

          INTEL

          英特爾

          RD48F2P0ZT00

          Intel StrataFlash Embedded Memory

          Introduction This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

          文件:1.60991 Mbytes 頁(yè)數(shù):102 Pages

          INTEL

          英特爾

          RD48F2P0ZTQ0

          Intel StrataFlash Embedded Memory

          Introduction This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

          文件:1.60991 Mbytes 頁(yè)數(shù):102 Pages

          INTEL

          英特爾

          RD48F3000L0ZBQ0

          1.8 Volt Intel StrataFlash? Wireless Memory with 3.0-Volt I/O (L30)

          The 1.8 Volt Intel StrataFlash? wireless memory with 3-Volt I/O product is the latest generation of Intel StrataFlash? memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 volt low-volta

          文件:1.40425 Mbytes 頁(yè)數(shù):100 Pages

          INTEL

          英特爾

          技術(shù)參數(shù)

          • VZ@IZT(V):

            4.6

          • IZT(mA):

            20

          • ZZT@IZT(?):

            25

          • ZZK@IZK(?):

            900

          • IZK(mA):

            1

          • IR@VR(μA):

            5

          • IR@VR(V):

            1

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          更多RD4供應(yīng)商 更新時(shí)間2026-1-20 14:30:00
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