絲?。?strong>RD3P03BBH；Package：TO-252；Nch 100V 35A Power MOSFET

Features 1) Low on - resistance 2) High Power Package(TO-252) 3) Pb-free plating ; RoHS compliant 4) Halogen free Application Switching

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ROHM

羅姆

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·100 Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed sw

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ISC

無(wú)錫固電

Nch 100V 35A, TO-252, Power MOSFET

RD3P03BBH is a power MOSFET with low on-resistance and high power package, suitable for switching. ? Low on - resistance\n? High Power Package (TO-252)\n? Pb-free plating ; RoHS compliant\n? Halogen free;

ROHM

羅姆

P??hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 125mΩ ID ‐3.1A Pb‐Free Lead Plating & Halogen Free

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EXCELLIANCE

杰力科技

DUAL TMOS POWER MOSFET 30 VOLTS

Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where p

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MOTOROLA

摩托羅拉

DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES

Plastic Power Transistors SO–8 for Surface Mount Applications ? Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc ? High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc ? Low Collector –Emitter Saturation Voltage — VCE(sat)

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MOTOROLA

摩托羅拉