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          首頁(yè) >RB520S>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          RB520S30T1

          Schottky Barrier Diode

          Schottky Barrier Diode These Schottky barrier diodes are designed for high?speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand?held and portable applications where spac

          文件:47.03 Kbytes 頁(yè)數(shù):3 Pages

          ONSEMI

          安森美半導(dǎo)體

          RB520S-30-T1

          SURFACE MOUNT SCHOTTKY BARRIER DIODE

          Low Turn-On Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

          文件:50.57 Kbytes 頁(yè)數(shù):4 Pages

          WTE

          Won-Top Electronics

          RB520S30T1G

          Schottky Barrier Diode

          Schottky Barrier Diode These Schottky barrier diodes are designed for high?speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand?held and portable applications where spac

          文件:47.03 Kbytes 頁(yè)數(shù):3 Pages

          ONSEMI

          安森美半導(dǎo)體

          RB520S30T1G

          Schottky Barrier Diode

          Schottky Barrier Diode These Schottky barrier diodes are designed for high?speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand?held and portable applications where spac

          文件:93.32 Kbytes 頁(yè)數(shù):3 Pages

          ONSEMI

          安森美半導(dǎo)體

          RB520S30T1G

          Schottky Barrier Diode

          These Schottky barrier diodes are designed for high?speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand?held and portable applications where space is limited. Featu

          文件:145.19 Kbytes 頁(yè)數(shù):4 Pages

          ONSEMI

          安森美半導(dǎo)體

          RB520S30T1G_V01

          Schottky Barrier Diode

          These Schottky barrier diodes are designed for high?speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand?held and portable applications where space is limited. Featu

          文件:145.19 Kbytes 頁(yè)數(shù):4 Pages

          ONSEMI

          安森美半導(dǎo)體

          RB520S30T5G

          Schottky Barrier Diode

          These Schottky barrier diodes are designed for high?speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand?held and portable applications where space is limited. Featu

          文件:145.19 Kbytes 頁(yè)數(shù):4 Pages

          ONSEMI

          安森美半導(dǎo)體

          RB520S30T5G

          Schottky Barrier Diode

          Schottky Barrier Diode These Schottky barrier diodes are designed for high?speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand?held and portable applications where spac

          文件:93.32 Kbytes 頁(yè)數(shù):3 Pages

          ONSEMI

          安森美半導(dǎo)體

          RB520S30TD

          Schottky Barrier Diode

          Schottky Barrier Diode These Schottky barrier diodes are designed for high?speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand?held and portable applications where spac

          文件:47.03 Kbytes 頁(yè)數(shù):3 Pages

          ONSEMI

          安森美半導(dǎo)體

          RB520S-30TE61

          Schottky barrier diode

          Features 1) Ultra Small mold type. (EMD2) 2) Low IR. 3) High reliability. Applications Low current rectification Construction Silicon epitaxial planar

          文件:408.01 Kbytes 頁(yè)數(shù):4 Pages

          ROHM

          羅姆

          技術(shù)參數(shù)

          • VRRM(V):

            30

          • VR(V):

            30

          • IO(A):

            200

          • IFSM(A):

            1

          • VF(V) Max.:

            0.6

          • IF(A):

            200

          • IR(μA)Max:

            1

          • IR(μA)Max_VR(V):

            10

          • CT(pF)Max.(Typ.):

            (4.0)

          • CT(pF)Max.(Typ.)_VR(V):

            10

          • CT(pF)Max.(Typ.)_f(MHz):

            1

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          更多RB520S供應(yīng)商 更新時(shí)間2026-1-19 9:31:00
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