絲印：R60；WE-MXGI SMT Power Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：711.98 Kbytes 頁數(shù)：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?a target="_blank" title="Marking" href="/r6002enh/marking.html">R6002ENH；Package：SOP8；Nch 600V 2A Power MOSFET

lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication Switching

文件：1.69183 Mbytes 頁數(shù)：14 Pages

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羅姆

絲?。?a target="_blank" title="Marking" href="/r6004rnd3/marking.html">R6004RND3；Package：TO-252；Nch 600V 4A Power MOSFET

Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant Application Switching

文件：2.35152 Mbytes 頁數(shù)：14 Pages

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絲?。?a target="_blank" title="Marking" href="/r6007rnd3/marking.html">R6007RND3；Package：TO-252；Nch 600V 7A Power MOSFET

Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant Application Switching

文件：2.56734 Mbytes 頁數(shù)：14 Pages

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絲?。?a target="_blank" title="Marking" href="/r6009e/marking.html">R6009E；Package：TO-252；Nch 600V 9A Power MOSFET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free plating ; RoHS compliant Application Switching

文件：2.35526 Mbytes 頁數(shù)：16 Pages

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絲印：R6009RND3；Package：TO-252；Nch 600V 9A Power MOSFET

Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant Application Switching

文件：2.35126 Mbytes 頁數(shù)：14 Pages

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羅姆

絲?。?a target="_blank" title="Marking" href="/r6011e/marking.html">R6011E；Package：TO-252；Nch 600V 11A Power MOSFET

Features 1) Low on-resistance 2) Low radiation noise 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant Application Switching

文件：2.45522 Mbytes 頁數(shù)：16 Pages

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羅姆

絲?。?a target="_blank" title="Marking" href="/r6011k/marking.html">R6011K；Package：TO-252；Nch 600V 11A Power MOSFET

Features 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant Application Switching

文件：2.27754 Mbytes 頁數(shù)：16 Pages

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羅姆

絲?。?a target="_blank" title="Marking" href="/r6012jnj/marking.html">R6012JNJ；Package：LPTS；Nch 600V 12A Power MOSFET

Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant Application Switching applications

文件：2.31767 Mbytes 頁數(shù)：15 Pages

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羅姆

絲印：R6012JNX；Package：TO-220FM；Nch 600V 12A Power MOSFET

Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant Application Switching applications

文件：2.26505 Mbytes 頁數(shù)：15 Pages

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