絲?。?strong>R4；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

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絲?。?strong>R4；Package：TO-236AB；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

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絲?。?strong>R4；Package：SOT323；Voltage regulator diodes

1. General description General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Wide working voltage range: nominal 2.4 V to 75 V (E24 range) ? Two tolerance series: ± 2 and ± 5 3. Applications ? Gene

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絲?。?strong>R4；Package：SC-70；Voltage regulator diodes

1. General description General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Wide working voltage range: nominal 2.4 V to 75 V (E24 range) ? Two tolerance series: ± 2 and ± 5 ? Qualified according to

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絲?。?strong>R4；Package：6Ld??TDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mA Dual LDO with Low Noise, High PSRR, and Low IQ ISL9016 is a high performance dual LDO capable of providing up to 150mA current on each channel. It features a low standby current and very high PSRR and is stable with output capacitance of 1μF to 4.7μF with an ESR of up to 200mΩ. Features ?

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絲印：R4；Package：SOD-123；SOD-123 Plastic-Encapsulate Diodes

Features Lead Free Finish/RoHS Compliant Extremely Low Thermal Resistance For Surface Mount Application and High Current Capability

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絲?。?strong>R4；Package：79A；SILICON POWER MOS FET

3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi

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絲?。?strong>R4；Package：SC-74；40 V PNP BISS loadswitch

Features * Low VCEsat (BISS) and resistor-equipped transistor in one package * Low threshold voltage (

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絲印：R4；Package：SC-88A；PNP/PNP matched double transistors

Features * Current gain matching * Base-emitter voltage matching * Common emitter configuration for SOT353 types * Application-optimized pinout

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絲印：R4；Package：DFN1006BD-2；Zener voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

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