絲?。?strong>R22；WE-MXGI SMT Power Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：820.57 Kbytes 頁數(shù)：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲印：R22；WE-XHMI SMT Power Inductor

General Information: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：906.77 Kbytes 頁數(shù)：9 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>R22；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：491.65 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>R22；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：490.54 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲印：R22；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：486.05 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲印：R22；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 100 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two high-speed I/O lines Low clamping voltage Low leakage current IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (Lightning) 4A (8/20μs) Applications Cell Phone Handsets and Acc

文件：2.584 Mbytes 頁數(shù)：4 Pages

UNSEMI

優(yōu)恩半導體

絲?。?strong>R22；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 100 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two unidirectional high-speed I/O lines Low clamping voltage Low leakage current IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-

文件：2.31241 Mbytes 頁數(shù)：4 Pages

UNSEMI

優(yōu)恩半導體

絲印：R22；Package：SMD；This specification applies to large current and low loss SMD shielding power inductor.

文件：2.37045 Mbytes 頁數(shù)：7 Pages

LEIDITECH

雷卯電子

絲?。?strong>R22；This specification applies to large current and low loss SMD shielding power inductor.

文件：1.80556 Mbytes 頁數(shù)：6 Pages

LEIDITECH

雷卯電子

絲?。?strong>R22；Package：SOT-23；N- Enhancement Mode Field Effect Transistor

文件：2.29442 Mbytes 頁數(shù)：7 Pages

PJSEMI

平晶半導體