絲?。?strong>R2；SILICON TRANSISTOR

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4225 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF through UHF band. It has large dynamic range and good current characteristics. FEATURES ? Low Noise and

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RENESAS

瑞薩

絲?。?strong>R2；Package：SOT353；Quadruple low capacitance ESD suppressor

FEATURES ? Low diode capacitance ? Low leakage current ? SOT353 (SC-88A) surface mount package ? Common anode configuration. APPLICATIONS ? Communication systems ? Computers and peripherals ? Audio and video equipment. DESCRIPTION Monolithic transient voltage suppressor diode in a fi

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NEXPERIA

安世

絲?。?strong>R2；Package：SOT353；Quadruple low capacitance ESD suppressor

FEATURES ? Low diode capacitance ? Low leakage current ? SOT353 (SC-88A) surface mount package ? Common anode configuration. APPLICATIONS ? Communication systems ? Computers and peripherals ? Audio and video equipment. DESCRIPTION Monolithic transient voltage suppressor diode in a five l

文件：220.48 Kbytes 頁(yè)數(shù)：12 Pages

NEXPERIA

安世

絲?。?strong>R2；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

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NEXPERIA

安世

絲印：R2；Package：TO-236AB；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

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NEXPERIA

安世

絲?。?strong>R2；Package：X2-DFN1006-3；20V 2-CH UNI-DIRECTIONAL TVS DIODE ARRAY

Features ? Low Profile Package (0.40mm Max) and Ultra-Small PCB Footprint Area (1.05 x 0.65mm Max) Suitable for Compact Portable Electronics ? Provides ESD Protection per IEC 61000-4-2 Standard: Air ±25kV, Contact ±25kV ? 2 Channels of ESD Protection ? Low Channel Input Capacitance ? Total

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DIODES

美臺(tái)半導(dǎo)體

絲?。?strong>R2；Package：DFN1006；Transient Voltage Suppressors for ESD Protection

Features 112 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one Bidirectional I/O line Low clamping voltage Working voltages : 7.0V Low leakage current IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (LIGHTING) 8A (8/20μs) IEC61000-4-2(ESD) ±30kV (air discharge) ±30kV (contact discharg

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UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?strong>R2；Package：6Ld??TDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mA Dual LDO with Low Noise, High PSRR, and Low IQ ISL9016 is a high performance dual LDO capable of providing up to 150mA current on each channel. It features a low standby current and very high PSRR and is stable with output capacitance of 1μF to 4.7μF with an ESR of up to 200mΩ. Features ?

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RENESAS

瑞薩

絲?。?strong>R2；The LESD8D7.0CA is designed to protect

General Description The LESD8D7.0CA is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Featur

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UMW

友臺(tái)半導(dǎo)體

絲?。?strong>R2；Package：SOD-882；The LESD8D7.0CA is designed to protect

General Description The LESD8D7.0CA is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Featur

文件：367.59 Kbytes 頁(yè)數(shù)：4 Pages

UMW

友臺(tái)半導(dǎo)體