絲?。?strong>R15；WE-HCMD SMT High Current Flat Wire Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：674.95 Kbytes 頁數(shù)：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲印：R15；WE-HCMD SMT High Current Flat Wire Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：675.19 Kbytes 頁數(shù)：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>R15；WE-XHMI SMT Power Inductor

General Information: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：749.58 Kbytes 頁數(shù)：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>R15；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：492.08 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>R15；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：490.97 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>R15；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：486.83 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>R15；Package：SOT-26；P-Channel Enhancement Mode MOSFET

Features Advanced Trench Process Technology Low Threshold Voltage Fast Switching Speed Halogen-Free & Lead-Free Applications Load Switch for Portable Devices Voltage Controlled Small Signal Switch

文件：4.70429 Mbytes 頁數(shù)：8 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲印：R15；Package：SOT-23；P-Channel Enhancement Mode MOSFET

Feature Advanced Trench Process Technology Low Threshold Voltage Fast Switching Speed Halogen-Free & Lead-Free ESD Protected up to 2KV (HBM) Applications Load Switch for Portable Devices Voltage controlled small signal switch

文件：6.34657 Mbytes 頁數(shù)：8 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?strong>R15；Package：SOD-323；1-Line Low Capacitance Bi-directional TVS Diode

文件：774.3 Kbytes 頁數(shù)：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

應(yīng)能江蘇應(yīng)能微電子股份有限公司

絲?。?strong>R15；Package：DFN1006-2；1-Line Ultra Low Capacitance Bi-directional TVS Diode

文件：712.66 Kbytes 頁數(shù)：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

應(yīng)能江蘇應(yīng)能微電子股份有限公司