絲?。?strong>R10；WE-HCMD SMT High Current Flat Wire Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：674.85 Kbytes 頁(yè)數(shù)：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲?。?strong>R10；WE-HCMD SMT High Current Flat Wire Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：675.18 Kbytes 頁(yè)數(shù)：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲?。?strong>R10；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：493.12 Kbytes 頁(yè)數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲?。?strong>R10；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：491.99 Kbytes 頁(yè)數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲印：R10；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：487.57 Kbytes 頁(yè)數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲印：R10；Package：SMD；This specification applies to large current and low loss SMD shielding power inductor.

文件：2.37045 Mbytes 頁(yè)數(shù)：7 Pages

LEIDITECH

雷卯電子

絲?。?strong>R10；This specification applies to large current and low loss SMD shielding power inductor.

文件：1.80556 Mbytes 頁(yè)數(shù)：6 Pages

LEIDITECH

雷卯電子

絲印：R1001；Package：SOP8；Automotive Zero Drift Low Offset Voltage Rail-to-Rail input/output CMOS Operational Amplifier

General Description LMR1001YF-C single CMOS operational amplifier features zero drift, low input offset voltage and Rail-to-Rail input/output that are suitable for sensor amplifiers, engine control unit, electric power steering, anti-lock braking system and all automotive application. Feat

文件：1.3998 Mbytes 頁(yè)數(shù)：20 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/r10022/marking.html">R10022；Package：DFN；2-Line ESD Protection for Automotive Ethernet

Features ? Open Alliance Compliant ? ESD Per IEC 61000-4-2 ±15kV (Contact), 25kV (Air) ? ESD per ISO 10605 ±30kV Contact & Air (R =2kΩ, C = 330pF/150pF) ±15kV Contact (R = 330Ω, C = 150pF) ? 1000 Contact Discharges: ±15kV (Open Alliance) ? Low Capacitance: 0.44pF Typical ? TVS Trigger

文件：978.49 Kbytes 頁(yè)數(shù)：8 Pages

SEMTECH

先之科

絲印：R10022；Package：DFN；2-Line ESD Protection for Automotive Ethernet

Features ? Open Alliance Compliant ? ESD Per IEC 61000-4-2 ±15kV (Contact), 25kV (Air) ? ESD per ISO 10605 ±30kV Contact & Air (R =2kΩ, C = 330pF/150pF) ±15kV Contact (R = 330Ω, C = 150pF) ? 1000 Contact Discharges: ±15kV (Open Alliance) ? Low Capacitance: 0.44pF Typical ? TVS Trigger

文件：978.49 Kbytes 頁(yè)數(shù)：8 Pages

SEMTECH

先之科