絲?。?strong>R1；Package：SOT353；Quadruple low capacitance ESD suppressor

FEATURES ? Low diode capacitance ? Low leakage current ? SOT353 (SC-88A) surface mount package ? Common anode configuration. APPLICATIONS ? Communication systems ? Computers and peripherals ? Audio and video equipment. DESCRIPTION Monolithic transient voltage suppressor diode in a fi

文件：220.5 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲印：R1；Package：SOT353；Quadruple low capacitance ESD suppressor

FEATURES ? Low diode capacitance ? Low leakage current ? SOT353 (SC-88A) surface mount package ? Common anode configuration. APPLICATIONS ? Communication systems ? Computers and peripherals ? Audio and video equipment. DESCRIPTION Monolithic transient voltage suppressor diode in a five l

文件：220.48 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲?。?strong>R1；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

絲?。?strong>R1；Package：TO-236AB；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：323.9 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

絲?。?strong>R1；Package：6Ld??TDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mA Dual LDO with Low Noise, High PSRR, and Low IQ ISL9016 is a high performance dual LDO capable of providing up to 150mA current on each channel. It features a low standby current and very high PSRR and is stable with output capacitance of 1μF to 4.7μF with an ESR of up to 200mΩ. Features ?

文件：558.84 Kbytes 頁數(shù)：11 Pages

RENESAS

瑞薩

絲?。?strong>R1；Package：79A；SILICON POWER MOS FET

4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS

文件：298.49 Kbytes 頁數(shù)：13 Pages

RENESAS

瑞薩

絲?。?strong>R1；Package：SC-74；40 V PNP BISS loadswitch

Features * Low VCEsat (BISS) and resistor-equipped transistor in one package * Low threshold voltage (

文件：270.79 Kbytes 頁數(shù)：16 Pages

NEXPERIA

安世

絲印：R1；Package：SOT143B；Ultra low capacitance double rail-to-rail ESD protection diode

1. General description Ultra low capacitance rail-to-rail ElectroStatic Discharge (ESD) protection diode in a small SOT143B Surface-Mounted Device (SMD) plastic package designed to protect two Hi-Speed data lines or high-frequency signal lines from the damage caused by ESD and other transients.

文件：230.94 Kbytes 頁數(shù)：11 Pages

NEXPERIA

安世

絲?。?strong>R1；Package：SOT143B；Ultra low capacitance double rail-to-rail ESD protection diode

1. General description Ultra low capacitance rail-to-rail ElectroStatic Discharge (ESD) protection diode in a small SOT143B Surface-Mounted Device (SMD) plastic package designed to protect two Hi-Speed data lines or high-frequency signal lines from the damage caused by ESD and other transients.

文件：232.88 Kbytes 頁數(shù)：11 Pages

NEXPERIA

安世

絲印：R1；Package：SOT363；NPN resistor-equipped transistor; PNP general purpose transistor

FEATURES ?Resistor-equipped transistor and general purpose transistor in one package ?100 mA collector current ?50 V collector-emitter voltage ?300 mW total power dissipation ?SOT363 package; replaces two SOT323 (SC-70) packaged devices on same PCB area ?Reduced pick and place costs. APPLIC

文件：368.09 Kbytes 頁數(shù)：8 Pages

NEXPERIA

安世