絲?。?strong>R07；WE-HCMD SMT High Current Flat Wire Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

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WURTHWurth Elektronik GmbH & Co. KG, Germany.

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絲印：R07；WE-HCMD SMT High Current Flat Wire Inductor

General Information: Ambient Temperature (referring IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：675.69 Kbytes 頁數(shù)：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

VOLTAGE REGULATOR

DESCRIPTION As the UTC linear integrated LDO, the UTC R070LD10 shows a high current, high accuracy, low-dropout voltage which built in on/off function. The features are: low dropout voltage, very low ground current. Cause the series have been designed for high current loads, so they are also

文件：352.73 Kbytes 頁數(shù)：10 Pages

UTC

友順

VOLTAGE REGULATOR

DESCRIPTION As the UTC linear integrated LDO, the UTC R070LD10 shows a high current, high accuracy, low-dropout voltage which built in on/off function. The features are: low dropout voltage, very low ground current. Cause the series have been designed for high current loads, so they are also

文件：352.73 Kbytes 頁數(shù)：10 Pages

UTC

友順

VOLTAGE REGULATOR

DESCRIPTION As the UTC linear integrated LDO, the UTC R070LD10 shows a high current, high accuracy, low-dropout voltage which built in on/off function. The features are: low dropout voltage, very low ground current. Cause the series have been designed for high current loads, so they are also

文件：352.73 Kbytes 頁數(shù)：10 Pages

UTC

友順

Other Protistor? Fuses Ferrule Fuses 27x60 URQ/URS/URB - 690 V to 1000 VAC

EXTREMELY HIGH IBREAKING CAPACITY FUSES: PROTECTION OF POWER SEMI CONDUCTORS ACCORDING TO IEC STANDARD 60269.1 AND 4 690 V - 1000 V AC VOLTAGE RATING aR-CLASS ACCORDING TO VDE 636-23 AND IEC 60269.4 690V URQ and 1000V URB are UL RECOGNIZED

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ETCList of Unclassifed Manufacturers

未分類制造商

Integrated Driver - MOS FET (DrMOS)

Description The R2J20657CNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip a

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Integrated Driver - MOS FET (DrMOS)

Description The R2J20608NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip al

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Integrated Driver - MOS FET (DrMOS)

Description The R2J20609NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip al

文件：337.59 Kbytes 頁數(shù)：18 Pages

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Silicon Schottky Barrier Diode for Rectifying

Features ? Low forward voltage drop and suitable for high efficiency rectifying. ? Ultra small Resin Package (TURP-FM) is suitable for compact and high-density surface mount design.

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