40 W, 50 V, DC – 6 GHz, GaN RF Power Transistor

Product Overview The QPD1035 is a 40W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz on a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier application for pulsed and CW operations. Key Features ? Operating Frequency Range:

文件：2.02769 Mbytes 頁數(shù)：21 Pages

QORVO

威訊聯(lián)合

DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor

The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant.\nGain, P3dB, and Drain Efficiency valu ? Frequency range: DC - 6 GHz\n? Drain Voltage: 50 V\n? Output Power (P3dB): 50 W\n? Drain Efficiency (P3dB): 52.2%\n? Linear Gain: 15.1dB\n? Low thermal resistance package;

Qorvo

威訊聯(lián)合

40 W, 50 V, DC – 6 GHz, GaN RF Power Transistor

Product Overview The QPD1035L is a 40W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz on a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier application for pulsed and CW operations. Key Features ? Operating Frequency Range

文件：2.05065 Mbytes 頁數(shù)：21 Pages

QORVO

威訊聯(lián)合

DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor

The QPD1035L is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant.\nGain, P3dB, and Drain Efficiency val ? Frequency range: DC - 6 GHz\n? Drain Voltage: 50 V\n? Output Power (P3dB): 50 W\n? Drain Efficiency (P3dB): 52.2%\n? Linear Gain: 15.1dB\n? Low thermal resistance package;

Qorvo

威訊聯(lián)合