X-Band 10 W GaN SPDT Switch

Key Features ? SPDT ? Frequency Range: 8 to 12 GHz ? Input Power: 10 W ? Insertion Loss: 30 dB Typical ? Switching Speed: 35 ns ? Control Voltages: 0 V/?28 V ? Redundant Control Lines ? Package Dimensions: 3 x 4.5 x 1.05 mm Performance is typical across frequency.

文件：970.1 Kbytes 頁數(shù)：18 Pages

QORVO

威訊聯(lián)合

400 um Discrete GaAs pHEMT

Key Features ? Frequency: DC – 20 GHz ? Output Power (P1dB)1: 26 dBm ? Typical Gain1: 13 dB ? Typical PAE1dB 1: 55% ? Noise Figure1: 1.1 dB ? No Vias ? Technology: 0.25 um GaAs pHEMT ? Chip Dimensions: 0.41 x 0.34 x 0.10 mm

文件：1.04218 Mbytes 頁數(shù)：10 Pages

QORVO

威訊聯(lián)合

Silicon Power Rectifier

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V ● Excellent reliability

文件：112.14 Kbytes 頁數(shù)：3 Pages

MICROSEMI

美高森美

Silicon Power Rectifier

文件：143.29 Kbytes 頁數(shù)：2 Pages

MICROSEMI

美高森美