絲?。?strong>QC；Package：TO-236AB；80 V, 100 mA PNP resistor-equipped transistors

Features and benefits ? 100 mA output current capability ? High breakdown voltage ? Built-in resistors ? Simplifies circuit design ? Reduces component count ? Reduces pick and place costs ? AEC-Q101 qualified

文件：301.36 Kbytes 頁數(shù)：16 Pages

NEXPERIA

安世

絲印：QC；Package：TO-236AB；80 V, 100 mA PNP resistor-equipped transistors

1. General description PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEDEC NPN complement: NHDTA123JT 2.2 47 NHDTC123JT NHDTA143ZT 4.7 47 NHDTC143ZT

文件：301.39 Kbytes 頁數(shù)：16 Pages

NEXPERIA

安世

絲?。?strong>QC；Package：SOT23；80 V, 100 mA PNP resistor-equipped transistors

Features and benefits ? 100 mA output current capability ? High breakdown voltage ? Built-in resistors ? Simplifies circuit design ? Reduces component count ? Reduces pick and place costs ? Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：298.11 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世

絲印：QC；Package：SOT-346；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications ? High current type (IC (max) = 800mA) ? With built-in bias resistors ? Simplify circuit design ? Reduce a quantity of parts and manufacturing process ? Low VCE (sat) ? Complementary to RN2401~RN2406

文件：322.45 Kbytes 頁數(shù)：8 Pages

TOSHIBA

東芝

絲?。?strong>QC；Package：WSON；TPS35 Nano IQ Precision Voltage Supervisor with Precision Timeout Watchdog Timer

1 Features ? Factory programmed or user-programmable watchdog timeout – ±10% Accurate timer (maximum) – Factory programmed: 1 msec to 100 sec ? Factory programmed or user-programmable reset delay – ±10% Accurate timer (maximum) – Factory programmed option: 2 msec to 10 sec ? Input

文件：1.77773 Mbytes 頁數(shù)：43 Pages

TI

德州儀器

絲?。?strong>QC；Package：WSON；TPS727 250-mA, Ultralow IQ, Fast Transient Response, RF Low-Dropout Linear Regulator

1 Features 1? Very Low Dropout: – 65 mV Typical at 100 mA – 130 mV Typical at 200 mA – 163 mV Typical at 250 mA ? 2% Accuracy Over Load, Line, Temperature ? Ultralow IQ: 7.9 μA ? Excellent Load Transient Performance:±50 mV for 200 mA Loading and Unloading Transient chip? Available in

文件：662.61 Kbytes 頁數(shù)：36 Pages

TI

德州儀器

絲印：QC；Package：WSON(DSE)；TPS727 250-mA, Ultralow IQ, Fast Transient Response, RF Low-Dropout Linear Regulator

1 Features 1? Very Low Dropout: – 65 mV Typical at 100 mA – 130 mV Typical at 200 mA – 163 mV Typical at 250 mA ? 2% Accuracy Over Load, Line, Temperature ? Ultralow IQ: 7.9 μA ? Excellent Load Transient Performance:±50 mV for 200 mA Loading and Unloading Transient chip? Available in

文件：669.54 Kbytes 頁數(shù)：36 Pages

TI

德州儀器

絲?。?strong>QC；Package：WSON；TPS727 250-mA, Ultralow IQ, Fast Transient Response, RF Low-Dropout Linear Regulator

1 Features 1? Very Low Dropout: – 65 mV Typical at 100 mA – 130 mV Typical at 200 mA – 163 mV Typical at 250 mA ? 2% Accuracy Over Load, Line, Temperature ? Ultralow IQ: 7.9 μA ? Excellent Load Transient Performance:±50 mV for 200 mA Loading and Unloading Transient chip? Available in

文件：662.61 Kbytes 頁數(shù)：36 Pages

TI

德州儀器

絲?。?strong>QC；Package：WSON；TPS727 250-mA, Ultralow IQ, Fast Transient Response, RF Low-Dropout Linear Regulator

1 Features 1? Very Low Dropout: – 65 mV Typical at 100 mA – 130 mV Typical at 200 mA – 163 mV Typical at 250 mA ? 2% Accuracy Over Load, Line, Temperature ? Ultralow IQ: 7.9 μA ? Excellent Load Transient Performance:±50 mV for 200 mA Loading and Unloading Transient chip? Available in

文件：662.61 Kbytes 頁數(shù)：36 Pages

TI

德州儀器

絲?。?strong>QC；Package：WSON；TPS727 250-mA, Ultralow IQ, Fast Transient Response, RF Low-Dropout Linear Regulator

1 Features 1? Very Low Dropout: – 65 mV Typical at 100 mA – 130 mV Typical at 200 mA – 163 mV Typical at 250 mA ? 2% Accuracy Over Load, Line, Temperature ? Ultralow IQ: 7.9 μA ? Excellent Load Transient Performance:±50 mV for 200 mA Loading and Unloading Transient chip? Available in

文件：662.61 Kbytes 頁數(shù)：36 Pages

TI

德州儀器