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          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          ESD501DPYR

          絲印:Q3;Package:X1SON;ESD501 Low Capacitance ESD Diode for RF and ADAS Signal Protection

          1 Features ? IEC 61000-4-2 ESD Protection: – ±15kV contact discharge – ±15kV air gap discharge ? IEC 61000-4-5 surge protection: – 3A (8/20μs) ? I/O capacitance: 0.3pF (typical) ? Ultra low leakage current: 1nA (typical) ? Industry standard 0402 package 2 Applications ? Automotive Ante

          文件:1.16331 Mbytes 頁數(shù):15 Pages

          TI

          德州儀器

          MMBZ33VBU-Q

          絲印:Q3;Package:SC-70;Low capacitance bidirectional dual line ESD protection diode

          1. General description ESD protection device in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, designed to protect two lines from the damage caused by ElectroStatic Discharge (ESD) and other transients. 2. Features and benefits ? Reverse stand-off voltage: VRWM = 27 V

          文件:213.82 Kbytes 頁數(shù):11 Pages

          NEXPERIA

          安世

          PESD2USB3UX-T

          絲?。?strong>Q3;Package:SOT23;Automotive infotainment ESD protection diode

          1. General description Automotive ESD protection device in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive In-vehicle network bus lines from the damage caused by ElectroStatic discharge (ESD) and other transients. This product protects es

          文件:270.67 Kbytes 頁數(shù):12 Pages

          NEXPERIA

          安世

          PESD3V3F2UT

          絲印:Q3;Package:SOT23;ESD protection diode

          1. General description ESD protection device in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two high-speed data lines from the damage caused by ElectroStatic discharge (ESD) and other transients. This product protects especially multimedia applicati

          文件:211.68 Kbytes 頁數(shù):11 Pages

          NEXPERIA

          安世

          PZU884LS-B3V0-Q

          絲?。?strong>Q3;Package:DFN1006BD-2;Zener voltage regulator diodes

          1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

          文件:296.87 Kbytes 頁數(shù):13 Pages

          NEXPERIA

          安世

          NCP706MX33TAG

          絲?。?strong>Q3;Package:XDFN8;Precision Very Low Dropout Voltage Regulator

          文件:621.26 Kbytes 頁數(shù):16 Pages

          ONSEMI

          安森美半導(dǎo)體

          TLV365QDBVRQ1

          絲?。?a target="_blank" title="Marking" href="/q365/marking.html">Q365;Package:SOT-23;TLV365-Q1 Automotive, 50-MHz, Zero-Crossover, Low-Distortion, High-CMRR, RRI/O, Single-Supply Operational Amplifier

          1 Features ? AEC-Q100 qualified – Temperature grade 1: –40°C to +125°C ? Gain bandwidth: 50 MHz ? Zer?-crossover distortion topology: – CMRR: 115 dB (typical) – Rail-to-rail input and output ? Input 100 mV beyond supply rail ? Noise: 4.5 nV/√Hz ? Slew rate: 27 V/μs ? Fast settling: 0.2 μ

          文件:2.11069 Mbytes 頁數(shù):31 Pages

          TI

          德州儀器

          TLV365QDBVRQ1

          絲印:Q365;Package:SOT-23;TLVx365-Q1 Automotive, 50MHz, Zero-Crossover, Low-Distortion, High-CMRR, RRI/O, Single-Supply Operational Amplifiers

          1 Features ? AEC-Q100 qualified – Temperature grade 1: –40°C to +125°C ? Gain bandwidth: 50MHz ? Zero-crossover distortion topology: – CMRR: 115dB (typical) – Rail-to-rail input and output ? Input 100mV beyond supply rail ? Noise: 4.5nV/√Hz ? Slew rate: 27V/μs ? Fast settling: 0.2μs to 0

          文件:2.34154 Mbytes 頁數(shù):35 Pages

          TI

          德州儀器

          TLV365QDBVRQ1

          絲?。?a target="_blank" title="Marking" href="/q365/marking.html">Q365;Package:SOT-23;TLVx365-Q1 Automotive, 50MHz, Zero-Crossover, Low-Distortion, High-CMRR, RRI/O, Single-Supply Operational Amplifiers

          1 Features ? AEC-Q100 qualified – Temperature grade 1: –40°C to +125°C ? Gain bandwidth: 50MHz ? Zero-crossover distortion topology: – CMRR: 115dB (typical) – Rail-to-rail input and output ? Input 100mV beyond supply rail ? Noise: 4.5nV/√Hz ? Slew rate: 27V/μs ? Fast settling: 0.2μs to 0

          文件:2.41794 Mbytes 頁數(shù):38 Pages

          TI

          德州儀器

          5962-9554901NXD

          絲印:Q372M;Package:SOIC;LinCMOS DUAL DIFFERENTIAL COMPARATORS

          文件:1.58393 Mbytes 頁數(shù):29 Pages

          TI

          德州儀器

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          更多Q3供應(yīng)商 更新時(shí)間2026-1-18 22:59:00
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