絲印：Q12；Package：SOD323；1 CHANNEL UNIDIRECTIONAL TVS

Features Provides ESD Protection Per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV ? 1 Channel of ESD Protection ? Low Channel Input Capacitance ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) Applications Cellular Handsets

文件：320.81 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導(dǎo)體

絲印：Q125；Package：SOT-23；TPS3808E-Q1 Low-Quiescent-Current, Programmable-Delay Supervisory Circuit for Automotive

1 Features ? AEC-Q100 qualified with the following results: – Device temperature grade 1: –40°C to +125°C ? Undervoltage monitoring for power rails – Reliable monitoring with high threshold accuracy (1 typical) – Fixed voltage threshold options from 0.9 V to 5 V – Adjustable voltage option

文件：1.35508 Mbytes 頁數(shù)：28 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/q128j/marking.html">Q128J；Package：K；1.8V 128M-BIT SERIAL FLASH MEMORY WITH DUAL, QUAD SPI

1. GENERAL DESCRIPTIONS The W25Q128JW (128M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code di

文件：2.38099 Mbytes 頁數(shù)：79 Pages

WINBOND

華邦電子

絲?。?a target="_blank" title="Marking" href="/q128j/marking.html">Q128J；Package：Y；1.8V 128M-BIT SERIAL FLASH MEMORY WITH DUAL, QUAD SPI

1. GENERAL DESCRIPTIONS The W25Q128JW (128M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code di

文件：2.38099 Mbytes 頁數(shù)：79 Pages

WINBOND

華邦電子

絲?。?a target="_blank" title="Marking" href="/q1216/marking.html">Q1216；Package：DFN2020-6L；P-ChannelEnhancement Mode Power MOSFET

文件：1.18483 Mbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/q1216/marking.html">Q1216；Package：DFN2020-6L；P-ChannelEnhancement Mode Power MOSFET

文件：1.18565 Mbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/q12n06/marking.html">Q12N06；Package：SOP-8；N-ChannelEnhancement Mode Power MOSFET

文件：1.16127 Mbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/q12n10/marking.html">Q12N10；Package：SOP-8；N-ChannelEnhancement Mode Power MOSFET

文件：1.93136 Mbytes 頁數(shù)：6 Pages

LEIDITECH

雷卯電子

絲印：Q128JVBJQ；Package：TFBGA-24；3V 128M-bit serial flash memory with dual/quad spi

文件：2.41057 Mbytes 頁數(shù)：78 Pages

WINBOND

華邦電子

絲印：Q128JVCJQ；Package：TFBGA-24；3V 128M-bit serial flash memory with dual/quad spi

文件：2.41057 Mbytes 頁數(shù)：78 Pages

WINBOND

華邦電子