絲印：PZT；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 600W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.25781 Mbytes 頁(yè)數(shù)：7 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲印：PZTA44；Package：SC-73；NPN high-voltage transistor

1. General description NPN high-voltage transistor in a SOT223 (SC73) Surface-Mounted Device plastic package. 2. Features and benefits ? Low current (max. 300 mA) ? High voltage (max. 400 V) 3. Applications ? Telecommunication

文件：781.82 Kbytes 頁(yè)數(shù)：9 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/pzta44/marking.html">PZTA44；Package：SC-73；NPN high-voltage transistor

1. General description NPN high-voltage transistor in a SOT223 (SC73) Surface-Mounted Device plastic package. 2. Features and benefits ? Low current (max. 300 mA) ? High voltage (max. 400 V) ? Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applicati

文件：197.88 Kbytes 頁(yè)數(shù)：8 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/pzta14/marking.html">PZTA14；Package：SOT223；NPN Silicon Darlington Transistor

文件：524.98 Kbytes 頁(yè)數(shù)：6 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/pzta42/marking.html">PZTA42；Package：SOT223；NPN Silicon High-Voltage Transistors

文件：523.12 Kbytes 頁(yè)數(shù)：6 Pages

INFINEON

英飛凌

絲印：2222A；Package：SOT-223；NPN Silicon Planar Epitaxial Transistor

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT?223 package which is designed for medium power surface mount applications. Features ? PNP Complement is PZT2907AT1 ? The SOT?223 Package Can be Soldered Using Wave or

文件：113.77 Kbytes 頁(yè)數(shù)：5 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/2222a/marking.html">2222A；Package：SOT-223；NPN General-Purpose Amplifier

Features ? This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ? Sourced from process 19.

文件：366.08 Kbytes 頁(yè)數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

絲印：ZT2222A；Package：SOT-223；NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT2907A. FEATURES ? High current (max. 600 mA) ? Low voltage (max. 40 V). APPLICATIONS ? Switching and linear amplification.

文件：130.5 Kbytes 頁(yè)數(shù)：7 Pages

恩XP

絲?。?a target="_blank" title="Marking" href="/zt2222a/marking.html">ZT2222A；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

FEATURES Epitaxial planar die construction Complementary PNP Type available (PZT2907A)

文件：1.74917 Mbytes 頁(yè)數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/zt2222a/marking.html">ZT2222A；Package：SOT223；NPN Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

文件：1.3191 Mbytes 頁(yè)數(shù)：4 Pages

TECHPUBLIC

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