Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz

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Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz

文件：201.27 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz

文件：201.27 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET 150W, 28V, 2110 – 2170MHz ? Broadband internal input and output matching ? Typical Pulsed CW performance, 2170 MHz, 28 V, 10 μs pulse width, 10% duty cycle - Output power at P1dB?= 150 W - Efficiency = 56% - Gain = 19 dB ? Typical single-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR @ 0.01% CCDF, Test Model;

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IC AMP RF LDMOS

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Package：H-37248G-4/2；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：IC AMP RF LDMOS

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