Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz

文件：1.36186 Mbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 - 2200 MHz

文件：590.04 Kbytes 頁數(shù)：10 Pages

CREE

科銳

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz

文件：1.36186 Mbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz

文件：1.36186 Mbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz

文件：1.36186 Mbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz

文件：1.36186 Mbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz

Infineon

英飛凌

Cellular (2000 MHz to 2200 MHz)

Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800?–?2200 MHz ·Asymmetric Doherty design:? - Main = 35 W Typ (P1dB)? - Peak = 80 W Typ (P1dB)\n ·Broadband internal matching\n ·CW performance in a Doherty configuration, 1805 MHz, 28 V - Output power = 100 W P1dB - Gain = 17.3 dB at 17.8 W Avg. - Efficiency = 46% at 17.8 W Avg.\n ·CW performance in a Dohe;

Infineon

英飛凌

High Power RF LDMOS FET120 W, 28 V, 1800 – 2200 MHz

The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs. It features input and output matching, and a thermally-enhanced package wit ? Broadband internal input and output matching\n? Asymmetric Doherty design\n? Main: P1dB = 35 W Typ\n? Peak: P1dB = 80 W Typ\n? Broadband internal matching\n? CW performance in a Doherty configuration, 1805 MHz, 28 V\n? Output power = 100 W P1dB\n? Gain = 17.3 dB at 17.8 W Avg\n? Efficiency = 46

MACOM

Package：H-37248-4；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：IC AMP RF LDMOS

WOLFSPEED