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    首頁(yè)
                >PTVA120501EA>規(guī)格書列表
                
    
            
    
                
    
                    
    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
    
                    
    PTVA120501EA
    Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz
    
Description
The PTVA120501EA LDMOS FET is designed for use in power amplifier
applications in the 1200 to 1400 MHz frequency band. Features include
high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides
excelle
    文件：695.33 Kbytes 頁(yè)數(shù)：10 Pages
    WOLFSPEED
    

    PTVA120501EA
    Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz
    文件：683.78 Kbytes 頁(yè)數(shù)：10 Pages
    CREE
    科銳
    

    PTVA120501EA
    Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz
    文件：1.1438 Mbytes 頁(yè)數(shù)：10 Pages
    INFINEON
    英飛凌
    

    PTVA120501EA-V1-R0
    Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz
    
Description
The PTVA120501EA LDMOS FET is designed for use in power amplifier
applications in the 1200 to 1400 MHz frequency band. Features include
high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides
excelle
    文件：695.33 Kbytes 頁(yè)數(shù)：10 Pages
    WOLFSPEED
    

    PTVA120501EA-V1-R2
    Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz
    
Description
The PTVA120501EA LDMOS FET is designed for use in power amplifier
applications in the 1200 to 1400 MHz frequency band. Features include
high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides
excelle
    文件：695.33 Kbytes 頁(yè)數(shù)：10 Pages
    WOLFSPEED
    

    PTVA120501EAV1R0
    Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz
    文件：1.1438 Mbytes 頁(yè)數(shù)：10 Pages
    INFINEON
    英飛凌
    

    PTVA120501EAV1R0XTMA1
    Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz
    文件：1.1438 Mbytes 頁(yè)數(shù)：10 Pages
    INFINEON
    英飛凌
    

    PTVA120501EAV1R2
    Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz
    文件：1.1438 Mbytes 頁(yè)數(shù)：10 Pages
    INFINEON
    英飛凌
    

    PTVA120501EAV1R2XTMA1
    Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz
    文件：1.1438 Mbytes 頁(yè)數(shù)：10 Pages
    INFINEON
    英飛凌
    

    PTVA120501EA
    Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz
    Infineon
    英飛凌
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Matching?：
      Input
    • Frequency Band?min?max：
      1200.0MHz?1400.0MHz
    • P1dB?：
      54.0W?
    • Supply Voltage?：
      50.0V?
    • Gain?：
      16.5dB?
    • Test Signal?：
      Pulsed
    
            
    
        
    
            
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    更多PTVA120501EA供應(yīng)商
            更新時(shí)間2026-1-22 14:16:00
        
    
        
    
          
    
            
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