Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 ??860 MHz

文件：1.28327 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 - 860 MHz

文件：489.93 Kbytes 頁數(shù)：11 Pages

CREE

科銳

Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 – 860 MHz

Infineon

英飛凌

UHF Broadcast (470 MHz to 806 MHz)

High Power RF LDMOS FET, 350W, 50V, 470-860 MHz ·Input matched\n ·Integrated ESD protection\n ·Low thermal resistance\n ·High gain\n ·Capable of handling 10:1 VSWR @50 V, 70 W average power (DVB-T 8K OFDM, 64QAM)\n ·Integrated ESD protection\n ·Low thermal resistance\n ·Pb-free and RoHS compliant\n ·Package : H-37248-4;

Infineon

英飛凌

Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 – 860 MHz

Input matched Integrated ESD protection Low thermal resistance High gain Capable of handling 10:1 VSWR @50 V; 70 W average power (DVB-T 8K OFDM; 64QAM) Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant ? Input matched\n?Integrated ESD protection\n?Low thermal resistance\n?High gain\n?Capable of handling 10:1 VSWR @50 V; 70 W average power (DVB-T 8K OFDM; 64QAM) Integrated ESD protection\n?Low thermal resistance\n?Pb-free and RoHS compliant;

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