Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 ??860 MHz

文件：1.28327 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 - 860 MHz

文件：489.93 Kbytes 頁數(shù)：11 Pages

CREE

科銳

High Power RF LDMOS FETs 350 W, 50 V, 470 – 860 MHz

The PTVA043502EC and PTVA043502FC are LDMOS FETs designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package with bolt-down and earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, these devices pr ? Input matched\n? Integrated ESD protection\n? Low thermal resistance\n? High gain\n? Capable of handling 10:1 VSWR @50 V, 70 W average power (DVB-T 8K OFDM, 64QAM)\n? Pb-free and RoHS compliant;

MACOM

UHF Broadcast (470 MHz to 806 MHz)

High Power RF LDMOS FET, 350?W, 50 V,?470 – 860 MHz ·Input matched\n ·Integrated ESD protection\n ·Low thermal resistance\n ·High gain\n ·Capable of handling 10:1 VSWR @50 V, 70 W average power (DVB-T 8K OFDM, 64QAM)\n ·Integrated ESD protection\n ·Low thermal resistance\n ·Pb-free and RoHS compliant\n ·Package : H-36248-4;

Infineon

英飛凌

Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 – 860 MHz

Input matched Integrated ESD protection Low thermal resistance High gain Capable of handling 10:1 VSWR @50 V; 70 W average power (DVB-T 8K OFDM; 64QAM) Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant ? Input matched\n?Integrated ESD protection\n?Low thermal resistance\n?High gain\n?Capable of handling 10:1 VSWR @50 V; 70 W average power (DVB-T 8K OFDM; 64QAM) Integrated ESD protection\n?Low thermal resistance\n?Pb-free and RoHS compliant;

MACOM