High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz

Unmatched input and outputTypical CW performance; 2170 MHz; 28 V: Output power @ P1dB = 10 W; Gain = 20 dB; Efficiency = 60%Typical two-carrier WCDMA performance; 2170 MHz; 28 V; 8 dB PAR: Output power = 1.3 W avg; Gain = 21 dB; Efficiency = 21%; ACPR = –44.9 dBc @ 5 MHzCapable of handling 1 ? Unmatched input and output\n? Typical CW performance; 2170 MHz; 28 V: Output power @ P1dB = 10 W; Gain = 20 dB; Efficiency = 60%\n? Typical two-carrier WCDMA performance; 2170 MHz; 28 V; 8 dB PAR: Output power = 1.3 W avg; Gain = 21 dB; Efficiency = 21%; ACPR = –44.9 dBc @ 5 MHz\n? Capable;

MACOM

General Purpose Transistors (700 MHz to 2700 MHz)

High Power RF LDMOS FET, 10W, 28V, 900 – 2700MHz ·Unmatched input and output\n ·Typical CW performance, 2170 MHz, 28 V - Output power @ P1dB = 10W - Gain = 20 dB - Efficiency = 60%\n ·Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR - Output power = 1.3 W avg - Gain = 21 dB - Efficiency = 21% - ACPR = –44.9 dBc @ 5 MHz\n ;

Infineon

英飛凌

Package：10-LDFN 裸露焊盤；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：10W, SI LDMOS, 28V, 700-2700MHZ

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Package：10-LDFN 裸露焊盤；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RFP-LD10M

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