Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 28 W, 28 V, 1800 – 2200 MHz ·Input matched\n ·Typical CW performance, 2170 MHz, 28 V, combined output - Output power at P1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB\n ·Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power\n ·Integrated ESD protection\n ·Low thermal resistance\n ·Pb-free and RoHS compliant\n ;

Infineon

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件：655.34 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件：655.34 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件：655.34 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

文件：655.34 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

Package：H-37248-4；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產品 晶體管 - FET，MOSFET - 射頻 描述：IC AMP RF LDMOS

INFINEON

英飛凌