Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ??2170 MHz

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INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FETs

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INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 150 W, 2110 ??2170 MHz

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CREE

科銳

Thermally-Enhanced High Power RF LDMOS FETs

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INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FETs

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INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FETs

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INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：832.5 Kbytes 頁(yè)數(shù)：14 Pages

INFINEON

英飛凌

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 150 W, 30 V, 2110 – 2170 MHz ·Broadband internal matching\n ·Enhanced for use in DPD error correction systems\n ·Typical two-carrier WCDMA performance at 2170 MHz, 30 V, - Average output power = 32 W - Linear Gain = 18 dB - Efficiency = 29% - Intermodulation distortion = –34 dBc - Adjacent channel power = –37 dBc\n ·Typi;

Infineon

英飛凌

High Power RF LDMOS FET150 W, 2110 – 2170 MHz

The PTFB211503FL is a thermally-enhanced, 150-watt, LDMOS FET designed for cellular power amplifier applications in the 2110 to 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages earless flange. Manufactured with Wolfspeed's advanced LD ? Broadband internal matching\n? Enhanced for use in DPD error correction systems\n? Typical CW performance, 2170 MHz, 30 V\n? Average output power = 25 W\n? Linear Gain = 18.5 dB\n? Efficiency = 32.5%\n? Adjacent channel power = –37 dBc\n? Typical CW performance, 2170 MHz, 28 V\n? Output power ;

MACOM

Package：2-扁平封裝，葉片引線，帶法蘭；包裝：帶 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：IC AMP RF LDMOS H-34288-4

WOLFSPEED