High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz

Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency and linearity performance in a small, overmolded plastic package. Features ? Typical two-carrier

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High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz

文件：331.6 Kbytes 頁數(shù)：18 Pages

INFINEON

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High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz

文件：331.6 Kbytes 頁數(shù)：18 Pages

INFINEON

英飛凌

High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz

文件：331.6 Kbytes 頁數(shù)：18 Pages

INFINEON

英飛凌

High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz

文件：331.6 Kbytes 頁數(shù)：18 Pages

INFINEON

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High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz

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General Purpose Transistors (700 MHz to 2700 MHz)

High Power RF LDMOS FET, 4 W, 700 – 2200 MHz ·Typical two-carrier WCDMA performance at 1842 MHz, 8 dB PAR, POUT = 27 dBm Avg, ACPR = –44 dBc\n ·Typical CW performance, 1842 MHz, 28 V - P OUT = 37 dBm - Efficiency = 53.5% - Gain = 17.9 dB\n ·Typical CW performance, 940 MHz, 28 V - P OUT = 37.5 dBm - Efficiency = 57% - Gain = 19.7 dB\n;

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FET RF LDMOS 8W SON10

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Package：10-LDFN 裸露焊盤；包裝：散裝 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF LDMOS 4W SON10

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包裝：散裝 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET TRANSISTORS

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