Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 ??2170 MHz

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Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz

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Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FETs, 200 W, 30 V, 2110 – 2170 MHz ·Broadband internal matching\n ·Typical two-carrier WCDMA performance at 2140 MHz, 30 V - Average output power = 50 W - Linear Gain = 15.8 dB - Efficiency = 28% - Intermodulation distortion = –35.5 dBc - Adjacent channel power = –40 dBc\n ·Typical single-carrier WCDMA performance at 2140 MHz, ;

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Package：2-扁平封裝，葉片引線，帶法蘭；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET LDMOS 30V H-36260-2

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Package：H-36260-2；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 2.14GHZ H-36260-2

INFINEON

英飛凌

Package：H-36260-2；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 2.14GHZ H-36260-2

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