Cellular (1800 MHz to 1995 MHz)

High Power RF LDMOS FETs, 200 W, 30 V, 1930 – 1990 MHz ·Broadband input and output matching\n Typical two-carrier WCDMA performance at 1990 MHz, 30 V - Average output power = 47 dBm - Linear Gain = 15.9 dB - Efficiency = 27% - IMD = -36 dBc - ACPR = -41 dBc\n ·Typical CW performance, 1960 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 5;

Infineon

英飛凌

Package：H-36260-2；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 1.99GHZ H-36260-2

INFINEON

英飛凌

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：IC RF FET LDMOS H-36260-2

INFINEON

英飛凌

Package：H-36260-2；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 1.99GHZ H-36260-2

INFINEON

英飛凌