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          首頁 >PTB20111>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PTB20111

          85 Watts, 860-900 MHz Cellular Radio RF Power Transistor

          Description The 20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used

          文件:47.28 Kbytes 頁數(shù):3 Pages

          ERICSSON

          愛立信

          PTB20111

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI PTB20111 is Designed for General Purpose Class AB Power Amplifier Applications up to 900 MHz. FEATURES: ? 25 W, 860-900 MHz ? Silicon Nitride Passivated ? Omnigold? Metalization System

          文件:39.54 Kbytes 頁數(shù):1 Pages

          ASI

          PTB20111

          85 Watts, 860–900 MHz Cellular Radio RF Power Transistor

          Description\nThe 20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to e

          Ericsson

          愛立信

          PTB20111

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION:\nThe ASI PTB20111 is Designed for General Purpose Class AB Power Amplifier Applications up to 900 MHz.FEATURES:\n? 25 W, 860-900 MHz\n? Silicon Nitride Passivated\n? Omnigold? Metalization System

          ASI Semiconductor

          ASI Semiconductor

          詳細參數(shù)

          • 型號:

            PTB20111

          • 功能描述:

            射頻放大器 RF Bipolar Trans

          • RoHS:

          • 制造商:

            Skyworks Solutions, Inc.

          • 類型:

            Low Noise Amplifier

          • 工作頻率:

            2.3 GHz to 2.8 GHz

          • P1dB:

            18.5 dBm

          • 輸出截獲點:

            37.5 dBm

          • 功率增益類型:

            32 dB

          • 噪聲系數(shù):

            0.85 dB

          • 工作電源電壓:

            5 V

          • 電源電流:

            125 mA

          • 測試頻率:

            2.6 GHz

          • 最大工作溫度:

            + 85 C

          • 安裝風(fēng)格:

            SMD/SMT

          • 封裝/箱體:

            QFN-16

          • 封裝:

            Reel

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          更多PTB20111供應(yīng)商 更新時間2026-1-20 10:31:00
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