Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 80 W, 28 V, 2110 – 2170 MHz ·Asymmetrical design - Main : P1dB = 19 W Typ - Peak : P1dB = 60 W Typ\n ·Broadband internal matching\n ·Wide video bandwidth\n ·Typical CW pulsed performance, 2170 MHz, 28 V (Doherty fixture) - Output power @ P3dB = 75 W - Efficiency = 48% - Gain = 14 dB\n ·Capable of handling 10:1 VSWR @2;

Infineon

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz

文件：650.25 Kbytes 頁數(shù)：8 Pages

INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz

文件：650.25 Kbytes 頁數(shù)：8 Pages

INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz

文件：650.25 Kbytes 頁數(shù)：8 Pages

INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz

文件：650.25 Kbytes 頁數(shù)：8 Pages

INFINEON

英飛凌

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：IC AMP RF LDMOS

INFINEON

英飛凌