3.8V~24V operation

文件：196.5 Kbytes 頁(yè)數(shù)：1 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

High Sensitivity Unipolar Switch

文件：196.5 Kbytes 頁(yè)數(shù)：1 Pages

PROLIFIC

旺玖科技

High Sensitivity Unipolar Switch

OVERVIEWThe PT3636 is a high sensitive unipolar Hall switch sensor. The built-in dynamic offset cancellation and temperature compensation of pre-amplifier stage achieves accuracy magnetic sensing. The wide supply voltage range is from 3.8V to 24V and the maximum output current is 50mA. ·3.8V~24V operation\n·High sensitivity ; -55G\n·Built-in dynamic offsetcancellation\n·High accuracy unipolar switch\n·ESD protection to 8KV\n·Open drain output\n·Low thermal drift magnetic sensing\nAPPLICATIONS·Brake Pedal Switch\n·Clutch Switch\n·Proximity Sensor\n·Solid State Switch\n·Weak Magnets;

Prolific

旺玖科技

36-Mbit DDR??II SRAM 2-word Burst Architecture (2.5 Cycle Read latency)

文件：849.61 Kbytes 頁(yè)數(shù)：30 Pages

RENESAS

瑞薩

36-Mbit DDR? II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT

Description The RMQCEA3636DGBA is a 1,048,576-word by 36-bit and the RMQCEA3618DGBA is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and

文件：416.34 Kbytes 頁(yè)數(shù)：31 Pages

RENESAS

瑞薩

36-Mbit DDR? II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

Description The RMQCHA3636DGBA is a 1,048,576-word by 36-bit and the RMQCHA3618DGBA is a 2,097,152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and

文件：846.53 Kbytes 頁(yè)數(shù)：30 Pages

RENESAS

瑞薩