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          首頁 >絲印反查>PSMN057

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PSMN057-200B

          絲?。?strong>PSMN057;Package:SOT404;N-channel TrenchMOS SiliconMAX standard level FET

          1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and ben

          文件:272.2 Kbytes 頁數(shù):10 Pages

          NEXPERIA

          安世

          PSMN057-200P

          絲?。?strong>PSMN057;Package:SOT78;N-channel TrenchMOS SiliconMAX standard level FET

          1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and ben

          文件:250.06 Kbytes 頁數(shù):9 Pages

          NEXPERIA

          安世

          PSMN057-200B

          絲?。?strong>PSMN057;Package:SOT404;N-channel TrenchMOS SiliconMAX standard level FET

          1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and ben

          文件:272.2 Kbytes 頁數(shù):10 Pages

          NEXPERIA

          安世

          PSMN057-200P

          絲?。?strong>PSMN057;Package:SOT78;N-channel TrenchMOS SiliconMAX standard level FET

          1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and ben

          文件:250.06 Kbytes 頁數(shù):9 Pages

          NEXPERIA

          安世

          PSMN057-200B

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 39A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 57mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:349.54 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PSMN057-200B

          N-channel TrenchMOS transistor

          GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES ? ’Trench’ technology ? Very low on-state resistance ? Fast switching ? Low thermal resistance Applications:-

          文件:98.06 Kbytes 頁數(shù):9 Pages

          PHI

          PHI

          PHI

          PSMN057-200P

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 39A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 57mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:372.11 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PSMN057-200P

          N-channel TrenchMOS transistor

          GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES ? ’Trench’ technology ? Very low on-state resistance ? Fast switching ? Low thermal resistance Applications:-

          文件:92.75 Kbytes 頁數(shù):8 Pages

          PHI

          PHI

          PHI

          PSMN057-200B_15

          N-channel TrenchMOS SiliconMAX standard level FET

          文件:238.54 Kbytes 頁數(shù):11 Pages

          PHI

          PHI

          PHI

          PSMN057-200P

          N-channel TrenchMOS SiliconMAX standard level FET

          文件:181.23 Kbytes 頁數(shù):13 Pages

          恩XP

          恩XP

          詳細(xì)參數(shù)

          • 型號(hào):

            PSMN057

          • 功能描述:

            MOSFET TAPE13 MOSFET

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導(dǎo)通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風(fēng)格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          恩XP
          24+
          標(biāo)準(zhǔn)封裝
          9348
          全新原裝正品/價(jià)格優(yōu)惠/質(zhì)量保障
          詢價(jià)
          NEXPERIA/安世
          25+
          SOT404
          600000
          NEXPERIA/安世全新特價(jià)PSMN057-200B即刻詢購立享優(yōu)惠#長期有排單訂
          詢價(jià)
          恩XP
          19+
          TO-263
          34
          只做原裝正品
          詢價(jià)
          恩XP
          2024+
          N/A
          70000
          柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
          詢價(jià)
          PH
          24+
          SOT404TO-263D2PAK
          8866
          詢價(jià)
          恩XP
          23+
          TO-263
          11846
          一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價(jià)
          恩XP
          24+
          TO-263
          20000
          全新原廠原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅!!
          詢價(jià)
          PHI
          24+
          TO-263
          6430
          原裝現(xiàn)貨/歡迎來電咨詢
          詢價(jià)
          PHI
          25+
          TO-263
          20000
          普通
          詢價(jià)
          恩XP
          23+
          NA
          20094
          正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
          詢價(jià)
          更多PSMN057供應(yīng)商 更新時(shí)間2026-1-18 22:59:00
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