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    首頁(yè)
                >PSMN015-100B>規(guī)格書列表
                
    
            
    
                
    
                    
    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
    
                    
    PSMN015-100B
    N-channel TrenchMOS transistor
    
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating.
FEATURES
? ’Trench’ technology
? Very low on-state resistance
? Fast switching
? Low thermal resistance
Applications:-

    文件：102.98 Kbytes 頁(yè)數(shù)：9 Pages
    PHI
    PHI
    PHI
    

    PSMN015-100B
    N-channel TrenchMOS SiliconMAX standard level FET
    
General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
■
    文件：213.53 Kbytes 頁(yè)數(shù)：12 Pages
    恩XP
    恩XP
    

    PSMN015-100B
    isc N-Channel MOSFET Transistor
    
FEATURES
·Drain Current -ID= 75A@ TC=25℃
·Drain Source Voltage -VDSS= 100V(Min)
·Static Drain-Source On-Resistance
-RDS(on) = 15mΩ(Max)@VGS= 10V
DESCRIPTION
·DC-to-DC Converter
·General Industrial Applications
·Power Motor Control
    文件：348.55 Kbytes 頁(yè)數(shù)：2 Pages
    ISC
    無(wú)錫固電
    

    PSMN015-100B
    N-channel TrenchMOS SiliconMAX standard level FET
    
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and b
    文件：711.99 Kbytes 頁(yè)數(shù)：12 Pages
    NEXPERIA
    安世
    

    PSMN015-100B
    N-channel TrenchMOS transistor
    文件：146.19 Kbytes 頁(yè)數(shù)：9 Pages
    PHI
    PHI
    PHI
    

    PSMN015-100B
    N-channel TrenchMOS SiliconMAX standard level FET
    SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.  ? Low conduction losses due to low on-state resistance\n? Rated for avalanche ruggedness;
    Nexperia
    安世
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Package name：
      D2PAK
    • Product status：
      Production
    • Channel type：
      N
    • Nr of transistors：
      1
    • VDS [max] (V)：
      100
    • RDSon [max] @ VGS = 10 V (mΩ)：
      15
    • Tj [max] (°C)：
      175
    • ID [max] (A)：
      75
    • QGD [typ] (nC)：
      35
    • QG(tot) [typ] @ VGS = 10 V (nC)：
      90
    • Ptot [max] (W)：
      300
    • Qr [typ] (nC)：
      115
    • VGSth [typ] (V)：
      3
    • Automotive qualified：
      N
    • Ciss [typ] (pF)：
      4900
    • Coss [typ] (pF)：
      390
    • Release date：
      2010-11-13
    
            
    
        
    
            
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    PH
    		

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    SOT404TO-263D2PAK
    		

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