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首頁(yè) >PSMN005>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
PSMN005-55P	文件：372.16 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：372.16 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC
PSMN005-55P	文件：70.95 Kbytes Page：9 Pages	N-channel logic level TrenchMOS transistor GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES ? ’Trench’ technology ? Very low on-state resistance ? Fast switching ? Low thermal resistance Applications:- 文件：70.95 Kbytes 頁(yè)數(shù)：9 Pages	PHI PHI	PHI
PSMN005-55P	文件：239.91 Kbytes Page：13 Pages	N-channel logic level TrenchMOS(TM) transistor FEATURES ? ’Trench’ technology ? Very low on-state resistance ? Fast switching ? Low thermal resistance GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications 文件：239.91 Kbytes 頁(yè)數(shù)：13 Pages	NEXPERIA 安世	NEXPERIA
PSMN005-75B	文件：271.43 Kbytes Page：13 Pages	N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS? technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters ■ OR-ing applications. 文件：271.43 Kbytes 頁(yè)數(shù)：13 Pages	PHI PHI	PHI
PSMN005-75B	文件：190.53 Kbytes Page：13 Pages	N-channel TrenchMOS SiliconMAX standard level FET General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ 文件：190.53 Kbytes 頁(yè)數(shù)：13 Pages	恩XP	恩XP
PSMN005-75B	文件：688.86 Kbytes Page：13 Pages	N-channel TrenchMOS SiliconMAX standard level FET 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b 文件：688.86 Kbytes 頁(yè)數(shù)：13 Pages	NEXPERIA 安世	NEXPERIA
PSMN005-75B	文件：349.07 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：349.07 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC
PSMN005-75P	文件：371.63 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：371.63 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC
PSMN005-75P	文件：687.93 Kbytes Page：13 Pages	N-channel TrenchMOS SiliconMAX standard level FET 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b 文件：687.93 Kbytes 頁(yè)數(shù)：13 Pages	NEXPERIA 安世	NEXPERIA
PSMN005-75P	文件：192.47 Kbytes Page：13 Pages	N-channel TrenchMOS SiliconMAX standard level FET General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ 文件：192.47 Kbytes 頁(yè)數(shù)：13 Pages	恩XP	恩XP

技術(shù)參數(shù)

Package name：
SO8
Product status：
Production
Channel type：
N
Number of transistors：
1
V_DS [max] (V)：
30
R_DSon [max] @ V_GS = 10 V (mΩ)：
5.5
R_DSon [max] @ V_GS = 4.5 V (mΩ)：
8
T_j [max] (°C)：
150
Q_GD [typ] (nC)：
14
Q_G(tot) [typ] @ V_GS = 4.5 V (nC)：
34
P_tot [max] (W)：
3.5
Q_r [typ] (nC)：
20
Automotive qualified：
N
C_iss [typ] (pF)：
3100
C_oss [typ] (pF)：
605
Date：
2011-01-05

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	PSMN005	恩XP	22+	TO-3P	6000	十年配單,只做原裝	詢價(jià)
深圳市宏捷佳電子科技有限公司	PSMN005	恩XP	25+	TO-3P	12300	獨(dú)立分銷商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
深圳市一線半導(dǎo)體有限公司	PSMN005-55P	PH	24+	SOT78TO-220AB	8866		詢價(jià)
深圳市卓越微芯電子有限公司	PSMN005-30K	PHI	25+	SOP8	1992	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	PSMN005-75P	恩XP	17+	TO-220	6200	100%原裝正品現(xiàn)貨	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	PSMN005-75P	恩XP	24+	TO-220AB	3000	全新原裝環(huán)?，F(xiàn)貨	詢價(jià)
深圳市利加科技有限公司	PSMN005-75P	恩XP	16+	TO220	9	全新原裝現(xiàn)貨	詢價(jià)
深圳市凌旭科技有限公司	PSMN005-30K	恩XP	2016+	SOP8	3000	只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!	詢價(jià)
深圳市鵬和科技有限公司	PSMN005-75B	VBsemi	24+	(DPAK)	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價(jià)
深圳市海天鴻電子科技有限公司	PSMN005-75P	恩XP	1708+	TO-220	8500	只做原裝進(jìn)口,假一罰十	詢價(jià)

更多PSMN005供應(yīng)商更新時(shí)間2026-1-20 14:02:00

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