絲?。?strong>PRM012N10E；Package：TO-251；100V Single N-Channel MOSFET

文件：795.99 Kbytes 頁數(shù)：8 Pages

PFC

節(jié)能元件

MOSFET ??Power, Single N-Channel 100 V, 14.4 m, 45 A

Features ? Shielded Gate MOSFET Technology ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? Low QRR, Soft Recovery Body Diode ? Low QOSS to Improve Light Load Efficiency ? These Devices are Pb?Free, Halogen Free/BFR Free, Beryllium Free and ar

文件：267.59 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

MOSFET - Power, Single N-Channel 100 V, 12.2 m, 52 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

文件：243.26 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

MOSFET - Power, Single N-Channel 100 V, 12.2 m, 52 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

文件：243.26 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體