UHF wideband transistor

DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT323 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. FEATURES

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PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

isc Silicon NPN RF Transistor

DESCRIPTION ? Low Noise NF = 1.5 dB TYP., @VCE = 6V, IC = 30 mA, f = 1 GHz ? High Gain ︱ S21e︱ 2 = 12 dB TYP. @VCE = 6V, IC = 30 mA, f = 1.0 GHz ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Designed for VHF, UHF low noise ampl

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ISC

無(wú)錫固電

NPN UHF寬頻帶晶體管

NPN晶體管，采用表面貼裝3針SOT323封裝。該晶體管主要設(shè)計(jì)用于RF前端GHz范圍內(nèi)的寬帶應(yīng)用，比如模擬和數(shù)字移動(dòng)電話、無(wú)繩電話、雷達(dá)探測(cè)器、傳呼機(jī)和衛(wèi)星電視調(diào)諧器。 金屬化鍍金確保極佳的可靠性\n高增益\n低失真\n低噪聲\n小型封裝;

恩XP

UHF wideband transistor

文件：122.34 Kbytes 頁(yè)數(shù)：16 Pages

JMNIC

錦美電子