絲?。?strong>PO；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features ? Input voltage range pack+: VSS – 0.3V to 12V ? FET drive: – CHG and DSG FET drive output ? Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) ? Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.44954 Mbytes 頁數(shù)：34 Pages

TI

德州儀器

絲?。?strong>PO；Package：WSON(DSE)；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features ? Input voltage range pack+: VSS – 0.3V to 12V ? FET drive: – CHG and DSG FET drive output ? Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) ? Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.43493 Mbytes 頁數(shù)：35 Pages

TI

德州儀器

絲?。?strong>PO；Package：WSON(DSE)；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features ? Input voltage range pack+: VSS – 0.3V to 12V ? FET drive: – CHG and DSG FET drive output ? Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) ? Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.43493 Mbytes 頁數(shù)：35 Pages

TI

德州儀器

絲?。?strong>PO；Package：SOT-89；Epitaxial Planar NPN Transistor

FEATURES PC=1W(Mounted on ceramic substrate). Small flat package. Complementary: KTA1664.

文件：494.27 Kbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?strong>PO；Package：SOT-89；NPN Transistors

■ Features ● 1W (Mounted on Ceramic Substrate) ● Small Flat Package ● Complementary to KTA1664

文件：1.133 Mbytes 頁數(shù)：2 Pages

KEXIN

科信電子

絲?。?strong>PO；Package：SOT-89；TRANSISTOR (NPN)

文件：272.35 Kbytes 頁數(shù)：2 Pages

FS

絲?。?a target="_blank" title="Marking" href="/po1/marking.html">PO1；Package：SOT-89；NPN Silicon Epitaxial Planar Transistor

FEATURES Suitable for output stage of 1 watts amplifier. High DC current gain. Small flat package. PC=1.0 to 2.0W. Complements the 2SA1204.

文件：442.7 Kbytes 頁數(shù)：3 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/po36/marking.html">PO36；Package：U-QFN2020-12；4-CH OVER-VOLTAGE PROTECTION FOR CC/SBU PINS ON USB TYPE-C

Features Operating Voltage Range: 2.7V to 5.5V 4-Channel Over-Voltage Protection with Auto-Recovery? RDS(ON) of OVP MOSFET for CC-Pin Protection: 350mΩ Typical? RDS(ON) of OVP MOSFET for SBU-Pin Protection: 5Ω Typical? CIN of OVP MOSFET for CC-Pin Protection: 50pF? CIN of OVP MOSFET for SBU-

文件：1.08078 Mbytes 頁數(shù)：14 Pages

DIODES

美臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/po39/marking.html">PO39；Package：U-QFN3030-16；4-CH OVER-VOLTAGE PROTECTION FOR CC/DIFF PINS ON USB TYPE-C

Features Operating Voltage Range: 2.7V to 5.5V? 4-Channel Over-Voltage Protection with Auto-Recovery? IEC 61000-4-2 ESD Protection over CCxC and DIFFxC Pins? RDS(ON) of OVP MOSFET for CC-Pin Protection: 300mΩ Typical RDS(ON) of OVP MOSFET for DIFF-Pin Protection: 5Ω Typical? CIN of OVP MOSFE

文件：1.04618 Mbytes 頁數(shù)：13 Pages

DIODES

美臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/po036xxq1/marking.html">PO036XXQ1；Package：VQFN-HR；TPS65036x-Q1 Automotive Camera, Radar and MCU PMIC

1 Features ? Qualified for automotive applications ? AEC-Q100 qualified with following results: – Device operates from 4V to 35V input supply – Device temperature grade 1: -40°C to +125°C ? Functional Safety -compliant – Developed for functional safety applications – Documentation available

文件：734.1 Kbytes 頁數(shù)：11 Pages

TI

德州儀器