LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS

FEATURES ● High Breakdown Voltage BVCBO ... 60V ● High Gain hFE ... 200 @ 500μA ● Low Noise ... 3 dB APPLICATIONS ■ Low Level, Low Noise Amplifier ■ Audio Through High Frequency Ranges ■ Operational Amplifier

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MICRO-ELECTRONICS

LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS

FEATURES\n● High Breakdown Voltage BVCBO ... 60V\n● High Gain hFE ... 200 @ 500μA\n● Low Noise ... 3 dBAPPLICATIONS\n■ Low Level, Low Noise Amplifier\n■ Audio Through High Frequency Ranges\n■ Operational Amplifier ● High Breakdown Voltage BVCBO ... 60V\n● High Gain hFE ... 200 @ 500μA\n● Low Noise ... 3 dB;

Micro Electronics

LOW NOISE DUAL-BAND QUADRATURE MODULATOR WITH AGC

文件：524.81 Kbytes 頁數(shù)：28 Pages

RFMD

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LOW NOISE DUAL-BAND QUADRATURE MODULATOR WITH AGC

文件：753.11 Kbytes 頁數(shù)：28 Pages

RFMD

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LOW NOISE DUAL-BAND QUADRATURE MODULATOR WITH AGC

Product Description The RF2483 is a dual-band direct I/Q to RF modulator designed for handset applications where multiple modes of operation are required. ‘The device provides common differential I/Q inputs and a common AGC amplifier. Independent single-ended LO inputs and single-ended high and l

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RFMD

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