絲印：PMT；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 600W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.25781 Mbytes 頁數(shù)：7 Pages

UNSEMI

優(yōu)恩半導體

絲印：PMTM；Package：SOT-23；SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER

1FEATURES · Controlled Baseline – One Assembly Site – One Test Site – One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · Low-Cost Singl

文件：753.24 Kbytes 頁數(shù)：27 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/pmtm/marking.html">PMTM；Package：SOT-23；SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER

1FEATURES · Controlled Baseline – One Assembly Site – One Test Site – One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · Low-Cost Singl

文件：753.24 Kbytes 頁數(shù)：27 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/pmtm/marking.html">PMTM；Package：SOT-23；SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER

1FEATURES · Controlled Baseline – One Assembly Site – One Test Site – One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · Low-Cost Singl

文件：753.24 Kbytes 頁數(shù)：27 Pages

TI

德州儀器

絲印：PMTM；Package：SOT-23；SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER

1FEATURES · Controlled Baseline – One Assembly Site – One Test Site – One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · Low-Cost Singl

文件：753.24 Kbytes 頁數(shù)：27 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/pmtm/marking.html">PMTM；Package：SOT-23；SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER

1FEATURES · Controlled Baseline – One Assembly Site – One Test Site – One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · Low-Cost Singl

文件：753.24 Kbytes 頁數(shù)：27 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/pmt9100dm-t2qu/marking.html">PMT9100DM-T2QU；Media Tracking Chip

文件：1.63616 Mbytes 頁數(shù)：15 Pages

PIXART

原相科技

絲印：T200EN；Package：SOT223；100 V N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology

文件：336.17 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/t2epe/marking.html">T2EPE；Package：SOT223；70 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic level compatible ? Very fast switching ? Trench MOSFET technology ?

文件：290.7 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/mt21en/marking.html">MT21EN；Package：SOT223；30 V, 7.4 A N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology 1

文件：461.2 Kbytes 頁數(shù)：16 Pages

NEXPERIA

安世