絲?。?a target="_blank" title="Marking" href="/1y/marking.html">1Y；Package：DFN2020-6；20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination

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NEXPERIA

安世

20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination

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PHI

PHI

20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination

Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Nexperia

安世

SMD Power Inductors Shielded

General Specification a.- Temp. rise 30oC typ. (PSB6025) 40oC typ. (PSB0503, PSB5028, PSB6013, PSB8040, PSB8058) b.- Rated current : Base on temp. rise & ?L/L0A = 35 typ. c.- Storage temp. : -40oC ~ +125oC d.- Operating temp. : -40oC ~ +105oC e.- Resistance to solder heat : 260o

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PREMO

普萊默

MAGNETIC EPOXY SHIELDED SMT POWER INDUCTOR

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MPSIND

美國芯源

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

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TECCOR